STL8DN10LF3 datasheet(4/15 Pages) STMICROELECTRONICS

tên linh kiện	STL8DN10LF3

Giải thích chi tiết về linh kiện	Automotive-grade dual N-channel 100 V, 25 m??typ., 7.8 A STripFET??F3 Power MOSFET in a PowerFLAT??5x6 double island package

Download	15 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

4 / 15 page

Electrical characteristics

STL8DN10LF3

4/15

DocID023009 Rev 6

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

100

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 100 V

1

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

1

2.5

V

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 4 A

25

35

m

Ω

VGS= 5 V, ID= 4 A

40

50

m

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =25 V, f=1 MHz,

VGS=0

-970

-

pF

Coss

Output capacitance

-

115

-

pF

Crss

Reverse transfer

capacitance

-

11.5

-

pF

Qg

Total gate charge

VDD=50 V, ID = 7.8 A

VGS =10 V

Figure 13

-

20.5

-

nC

Qgs

Gate-source charge

-

4

-

nC

Qgd

Gate-drain charge

-

5

-

nC

RG

Intrinsic gate resistance

f=1 MHz open drain

-

3.65

-

Ω

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD=50 V, ID= 7.8 A,

RG=4.7 Ω, VGS=10 V

Figure 14

-8.7

-

ns

tr

Rise time

-

9.6

-

ns

td(off)

Turn-off delay time

-

50.6

-

ns

tf

Fall time

-

5.2

-

ns

Số phần tương tự - STL8DN10LF3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STL8DN6LF3	1Mb / 18P	Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
STMicroelectronics	STL8DN6LF6AG	939Kb / 16P	Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package January 2016 Rev 3

More results

Mô tả tương tự - STL8DN10LF3

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STL8DN6LF3	1Mb / 18P	Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
	STL7DN6LF3	992Kb / 18P	Automotive-grade dual N-channel 60 V, 35 m??typ., 6.5 A STripFET??F3 Power MOSFET in PowerFLAT??5x6 double island February 2015 Rev 4
	STL8N10LF3	850Kb / 13P	N-channel 100 V, 25 mA typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 package
	STL8N6LF3	976Kb / 15P	Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package May 2017
	STL38DN6F7AG	707Kb / 15P	Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package March 2018 Rev 1
	STL10DN15F3	1Mb / 14P	N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package
	STL66DN3LLH5	617Kb / 15P	Dual N-channel 30 V, 5.9 m廓, 20 A STripFET??V Power MOSFET in PowerFLAT??5x6 double island package March 2012 Rev 2
	STL58N3LLH5	711Kb / 16P	Automotive-grade N-channel 30 V, 0.0076 ??typ., 56 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package December 2014 Rev 2
	STL66N3LLH5	985Kb / 15P	Automotive-grade dual N-channel 30 V, 4.5 m廓 typ., 80 A STripFET??H5 Power MOSFET in a PowerFLAT??5x6 package January 2016 Rev 3
	STL36DN6F7	760Kb / 16P	Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package May 2017

More results

STL8DN10LF3 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

STL8DN10LF3 bảng dữ liệu(HTML) 4 Page - STMicroelectronics

Số phần tương tự - STL8DN10LF3

Mô tả tương tự - STL8DN10LF3

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

bảng dữ liệu tải về

Link URL