STH315N10F7-2 datasheet(7/19 Pages) STMICROELECTRONICS

tên linh kiện	STH315N10F7-2

Giải thích chi tiết về linh kiện	Automotive-grade N-channel 100 V, 2.1 m廓 typ., 180 A STripFET??F7 Power MOSFETs

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STH315N10F7-2, STH315N10F7-6

Electrical characteristics

19

Figure 8. Normalized V(BR)DSS vs temperature

Figure 9. Capacitance variations

Figure 10. Source-drain diode forward

characteristics

Figure 11. Normalized gate threshold voltage vs

temperature

Figure 12. Normalized on-resistance vs

temperature

0

-25

75

25

-75

125

V(BR)DSS

TJ(°C)

(norm)

0.94

0.96

0.98

1.00

1.02

1.04

ID = 1mA

AM14742v1

C

6000

4000

2000

0

40

VDS(V)

(pF)

20

8000

60

Ciss

Coss

Crss

10000

14000

80

100

12000

AM14738v1

TJ=-50°C

TJ=150°C

TJ=25°C

VSD

0

40

ISD(A)

(V)

160

80

120

0.45

0.55

0.65

0.75

0.85

0.95

1.05

AM14739v1

VGS(th)

0.90

0.80

0.70

0.60

TJ(°C)

(norm)

1.0

0

-25

75

25

-75

125

ID = 250µA

AM14741v1

RDS(on)

1.6

1.2

0.8

0.4

0

TJ(°C)

(norm)

-25

75

25

-75

125

2.0

ID = 60A

AM14740v1

Số phần tương tự - STH315N10F7-2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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