STF10N80K5 datasheet(4/14 Pages) STMICROELECTRONICS

tên linh kiện	STF10N80K5

Giải thích chi tiết về linh kiện	N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

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Electrical characteristics

STF10N80K5

4/14

DocID026564 Rev 4

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current

VGS = 0, VDS = 800 V

1

µA

VGS = 0, VDS = 800 V,

Tc=125 °C

50

µA

IGSS

Gate body leakage current

VDS = 0, VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 4.5 A

0.470 0.600

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f =1 MHz,

VGS =0

-

635

-

pF

Coss

Output capacitance

-

53

-

pF

Crss

Reverse transfer

capacitance

-0.8

-

pF

Co(tr)

(1)

1.

“Time related” is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

-85

-

pF

Co(er)

(2)

2.

“Energy related” is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-34

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID=0

-

6

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 9 A

VGS =10 V

(see Figure 16)

-22

-

nC

Qgs

Gate-source charge

-

5.5

-

nC

Qgd

Gate-drain charge

-

13.2

-

nC

Số phần tương tự - STF10N80K5

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STF10N80K5	841Kb / 17P	N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads September 2016

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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	STF10LN80K5	714Kb / 14P	N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package December 2015 Rev 3
	STF7LN80K5	709Kb / 13P	N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a TO-220FP package December 2015 Rev 1
	STF23N80K5	714Kb / 13P	N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package August 2015 Rev 1
	STF17N80K5	636Kb / 13P	N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package January 2016
	STF3LN80K5	716Kb / 13P	N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a TO-220FP package July 2016
	STF4LN80K5	719Kb / 13P	N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package May 2016
	STFU10N80K5	841Kb / 17P	N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads September 2016
	STP10LN80K5	741Kb / 14P	N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
	STF4N90K5	726Kb / 13P	N-channel 900 V, 1.90 廓 typ., 4 A MDmesh??K5 Power MOSFET in a TO-220FP package November 2016 Rev 2

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