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STH6N95K5-2
Electrical ratings
DocID027383 Rev 3
3/17
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 30
V
ID
Drain current at TC = 25 °C
6
A
ID
Drain current at TC = 100 °C
3.8
A
IDM(1)
Drain current (pulsed)
24
A
PTOT
Total dissipation at TC = 25 °C
110
W
IAR(2)
Max current during repetitive or single pulse avalanche
3
A
EAS(3)
Single pulse avalanche energy
90
mJ
dv/dt(4)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt(5)
MOSFET dv/dt ruggedness
50
V/ns
Tj
Operating junction temperature
- 55 to 150
°C
Tstg
Storage temperature
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulse width limited by Tjmax.
(3)Starting Tj = 25 °C, ID = IAS, VDD = 50 V.
(4)ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS.
(5)VDS ≤ 760 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
1.14
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb max
30
Notes:
(1)When mounted on 1 inch² FR-4 board, 2 oz Cu.


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