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4 / 16 page Electrical characteristics STD7LN80K5 4/16 DocID028774 Rev 1 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 800 V IDSS Zero gate voltage Drain current VGS = 0 V, VDS = 800 V 1 µA VGS = 0 V, VDS = 800 V, TC = 125 °C 50 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID =100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 2.5 A 0.95 1.15 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 270 - pF Coss Output capacitance - 22 - pF Crss Reverse transfer capacitance - 0.5 - pF Co(er) (1) Equivalent capacitance energy related VDS = 0 to 640 V, VGS = 0 V - 17 - nC Co(tr) (2) Equivalent capacitance time related - 48 - nC Rg Intrinsic gate resistance f = 1 MHz, ID=0 A - 7.5 - Ω Qg Total gate charge VDD = 640 V, ID = 5 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 12 - nC Qgs Gate-source charge - 2.6 - nC Qgd Gate-drain charge - 8.6 - nC Notes: (1) Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS (2) Time related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 9.3 - ns tr Rise time - 6.7 - ns td(off) Turn-off-delay time - 23.6 - ns tf Fall time - 17.4 - ns |
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