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ADS41B29IRGZR bảng dữ liệu(PDF) 8 Page - Texas Instruments |
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ADS41B29IRGZR bảng dữ liệu(HTML) 8 Page - Texas Instruments |
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8 / 59 page  8 ADS41B29, ADS41B49 SBAS486F – NOVEMBER 2009 – REVISED FEBRUARY 2016 www.ti.com Product Folder Links: ADS41B29 ADS41B49 Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated (1) With 0-dB gain. See the Gain for SFDR, SNR Trade-Off section in Feature Description for the relationship between input voltage range and gain. (2) See the Overview section in the Detailed Description. (3) See the Serial Interface section for details on the low-speed mode. (4) Prolonged use at this junction temperature can increase the device failure-in-time (FIT) rate. 6.3 Recommended Operating Conditions MIN NOM MAX UNIT SUPPLIES AVDD Analog supply voltage 1.7 1.8 1.9 V AVDD_BUF Analog buffer supply voltage 3 3.3 3.6 V DRVDD Digital supply voltage 1.7 1.8 1.9 V ANALOG INPUTS Differential input voltage range(1) 1.5 VPP Input common-mode voltage 1.7 ± 0.05 V Maximum analog input frequency with 1.5-VPP input amplitude (2) 400 MHz Maximum analog input frequency with 1-VPP input amplitude (2) 600 MHz CLOCK INPUT Low-speed mode enabled(3) 20 80 MSPS Low-speed mode disabled(3) > 80 250 MSPS Input clock amplitude differential (VCLKP – VCLKM) Sine wave, ac-coupled 0.2 1.5 VPP LVPECL, ac-coupled 1.6 VPP LVDS, ac-coupled 0.7 VPP LVCMOS, single-ended, ac-coupled 1.8 V Input clock duty cycle Low-speed mode enabled 40% 50% 60% Low-speed mode disabled 35% 50% 65% DIGITAL OUTPUTS CLOAD Maximum external load capacitance from each output pin to DRGND 5 pF RLOAD Differential load resistance between the LVDS output pairs (LVDS mode) 100 Ω TJ Operating junction temperature Recommended 108 °C Maximum rated(4) 125 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) ADS41B29, ADS41B49 UNIT RGZ (VQFN) 48 PINS RθJA Junction-to-ambient thermal resistance 27.9 °C/W RθJC(top) Junction-to-case (top) thermal resistance 15.1 °C/W RθJB Junction-to-board thermal resistance 5.4 °C/W ψJT Junction-to-top characterization parameter 0.3 °C/W ψJB Junction-to-board characterization parameter 5.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.7 °C/W |
Số phần tương tự - ADS41B29IRGZR |
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Mô tả tương tự - ADS41B29IRGZR |
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