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TS12001 bảng dữ liệu(PDF) 8 Page - Silicon Laboratories |
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TS12001 bảng dữ liệu(HTML) 8 Page - Silicon Laboratories |
8 / 11 page TS12001 Page 8 TS12001 Rev. 1.0 allows the output of the comparator to latch to a HIGH state under certain conditions. If LHDET is set HIGH, the COUTPP output will switch based on the input to the comparator. When LHDET is set LOW and COUTPP is HIGH, COUTPP will remain HIGH until LHDET goes HIGH. If COUTPP is initially LOW instead, COUTPP will remain LOW until a LOW-to- HIGH transition occurs on the COUTPP output. After this event, COUTPP will remain HIGH and be unresponsive to any changes at the input of the comparator until LHDET goes HIGH. In essence, the LHDET pin offers a LOW-to-HIGH detection. However, LHDET must not be left open. The open- drain output, COUTOD, is the inverter version of the COUTPP output. Connect LHDET to VIN for normal operation or to VSS for LHDET enable. If the SET pin is not used, it cannot be left unconnected and should be tied to VSS. Comparator The TS12001 has an internal comparator that can eliminate supply glitches that commonly occur when output transitions occur. In addition, the input exhibits ±10mV of internal hysteresis in order to insure clean output switching behavior. The outputs can swing to within 100mV of the supply rails. The COUTPP output can source and sink 0.1mA and 0.5mA of current. The COUTD outputs can sink 1.4mA of current with VCOUTOD = 0.78V Internal Reference The TS12001’s on-board 0.58V ±4.5% reference voltage can source and sink 0.1µA and 0.1µA of current and can drive a capacitive load less than 50pF and greater than 50nF with a maximum capacitive load of 250nF. The higher the capacitive load, the lower the noise on the reference voltage and the longer the time needed for the reference voltage to respond and become available on the REFOUT pin. With a 250nF capacitive load, the response time is approximately 20ms. While also available as a separate pin as REFOUT, the reference is tied internally to the inverting input of the comparator. APPLICATIONS INFORMATION External Voltage Detector Design Depending on the battery voltage used and the voltage one wishes to detect, the TS12001 can be designed accordingly. As shown in Figure 1, R1 and R2 can be selected based on the desired voltage to detect. Table 1. provides R1 and R2 resistor combinations for detecting various VIN voltages. VIN Threshold Voltage(V) R1(M Ω) R2(MΩ) 0.9 2.2 4.02 1.07 3.32 4.02 1.28 4.75 4.02 1.52 6.49 4.02 1.85 8.66 4.02 Table 1. Resistor Combinations for Several VIN Threshold Voltages The design equation for this circuit is shown below. The SET pin voltage (VSET) that will cause a HIGH-to-LOW transition on the output is approximately 580mV. To design the circuit, R1 or R2 can be selected along with the desired battery voltage to detect. Then, the second resistor value can be evaluated using the voltage divider equation below. R1= VIN x R2‐VSET x R2 VSET A Nanopower 1.8V Core System Voltage Detector When power supply rails sag in any system, it is important to alert the CPU. A CPU can be used to detect when I/O or core system voltages sag below a prescribed threshold as shown Figure 2. In this circuit, a 1.8V core system voltage detector is designed around the TS12001 providing a low battery detect signal. R1 and R2 were selected to set a SET voltage at 582mV so that when VCORE drops below 1.77V, the TS12001 output transitions to LOW. It is recommended to use 1% resistors for optimal accuracy. The circuit consumes approximately 0.75µA of current when VCORE = 1.8V. PC Board Layout and Power-Supply Bypassing While power-supply bypass capacitors are not typically required, it is good engineering practice to use 0.1uF bypass capacitors close to the device’s |
Số phần tương tự - TS12001 |
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Mô tả tương tự - TS12001 |
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