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FDD86367_F085 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

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May 2015
©2015 Fairchild Semiconductor Corporation
FDD86367_F085 Rev. 1.0
www.fairchildsemi.com
1
FDD86367_F085
N-Channel PowerTrench® MOSFET
80 V, 100 A, 4.2 m
Ω
Features
Typical RDS(on) = 3.3 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
D
G
S
G
S
D
TO-252
D-PAK
(TO-252)
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
Ratings
Units
VDSS
Drain-to-Source Voltage
80
V
VGS
Gate-to-Source Voltage
±20
V
ID
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
100
A
Pulsed Drain Current
TC = 25°C
See Figure 4
EAS
Single Pulse Avalanche Energy
(Note 2)
82
mJ
PD
Power Dissipation
227
W
Derate Above 25oC1.52
W/oC
TJ, TSTG Operating and Storage Temperature
-55 to + 175
oC
RθJC
Thermal Resistance, Junction to Case
0.66
oC/W
RθJA
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
52
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD86367
FDD86367_F085
D-PAK(TO-252)
13”
16mm
2500units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 40μH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
For current package drawing, please refer to the Fairchild web‐
site  at  http://www.fairchildsemi.com/package‐drawings/TO/
TO252A03.pdf.


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