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FDD6N50TM_F085 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDD6N50TM_F085 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FDD6N50TM_F085 R ev. C1 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6N50 FDD6N50TM _F085 D-PAK 380mm 16mm 2500 Electrical Characteristics T C = 25°C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3A -- 0.76 0.9 Ω gFS Forward Transconductance VDS = 40V, ID = 3A (Note 4) -- 2.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 720 940 pF Coss Output Capacitance -- 95 190 pF Crss Reverse Transfer Capacitance -- 9 13.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) -- 6 20 ns tr Turn-On Rise Time -- 55 120 ns td(off) Turn-Off Delay Time -- 25 60 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = 400V, ID = 6A VGS = 10V (Note 4, 5) -- 12.8 16.6 nC Qgs Gate-Source Charge -- 3.7 -- nC Qgd Gate-Drain Charge -- 5.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 6A dIF/dt =100A/µs (Note 4) -- 275 -- ns Qrr Reverse Recovery Charge -- 1.7 -- µC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
Số phần tương tự - FDD6N50TM_F085 |
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Mô tả tương tự - FDD6N50TM_F085 |
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