DATASHEET | SEPTEMBER 2015

FIBER OPTICS

| REV 2015.09

Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.

Chip Electrical/Optical Performance Characteristics

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Operating Temperature

-

0

+25

+85

°C

Threshold Current

+25

°C

+85

°C

-

-

7

26

20

45

mA

Slope Efficiency

QE

+25

°C

+85

°C

0.30

0.20

0.36

-

-

mW/mA

DC Resistance

R

+25

°C

-

4.5

12

Ω

Operating Voltage

-

-

1.3

1.5

V

Central Wavelength

1

λ

At Ith+20mA

1470

1490

1510

nm

Side Mode Suppression Ratio

SMSR

-

30

40

-

dB

Beam Divergence Angle, Vertical

-

Full Width, Half Max

-

32

36

deg

Beam Divergence Angle, Horizontal

-

Full Width, Half Max

-

27

30

deg

Laser Reverse Voltage

-

1

-

-

V

Laser Operating Current

2

+25

°C

-

-

100

mA

1 Unless otherwise specified

2 DC

Outline Drawing

G1033-032, 1490 nm GPON Laser Diode Chip

Figure 1: Drawing of 1490nm DFB laser diode chip. Top view and cross-sectional views are shown.