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54ABT646E-QML bảng dữ liệu(PDF) 5 Page - National Semiconductor (TI) |
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54ABT646E-QML bảng dữ liệu(HTML) 5 Page - National Semiconductor (TI) |
5 / 14 page Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Storage Temperature −65˚C to +150˚C Ambient Temperature under Bias −55˚C to +125˚C Junction Temperature under Bias Ceramic −55˚C to +175˚C V CC Pin Potential to Ground Pin −0.5V to +7.0V Input Voltage (Note 3) −0.5V to +7.0V Input Current (Note 3) −30 mA to +5.0 mA Voltage Applied to Any Output in the Disable or Power-Off State −0.5V to +5.5V in the HIGH State −0.5V to V CC Current Applied to Output in LOW State (Max) twice the rated I OL (mA) DC Latchup Source Current −500 mA Over Voltage Latchup (I/O) 10V Recommended Operating Conditions Free Air Ambient Temperature Military −55˚C to +125˚C Supply Voltage Military +4.5V to +5.5V Minimum Input Edge Rate ( ∆V/∆t) Data Input 50 mV/ns Enable Input 20 mV/ns Clock Input 100 mV/ns Note 2: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 3: Either voltage limit or current limit is sufficient to protect inputs. DC Electrical Characteristics Symbol Parameter ABT646 Units V CC Conditions Min Typ Max V IH Input HIGH Voltage 2.0 V Recognized HIGH Signal V IL Input LOW Voltage 0.8 V Recognized LOW Signal V CD Input Clamp Diode Voltage −1.2 V Min I IN = −18 mA (Non I/O Pins) V OH Output HIGH Voltage 54ABT 2.5 V I OH = −3 mA, (An,Bn) 54ABT 2.0 Min I OH = −24 mA, (An,Bn) V OL Output LOW Voltage 54ABT 0.55 V Min I OL = 48 mA, (An,Bn) V ID Input Leakage Test 4.75 V 0.0 I ID = 1.9 µA, (Non-I/O Pins) All Other Pins Grounded I IH Input HIGH Current 5 µA Max V IN = 2.7V (Non-I/O Pins) (Note 5) 5V IN = VCC (Non-I/O Pins) I BVI Input HIGH Current Breakdown Test 7 µA Max V IN = 7.0V (Non-I/O Pins) I BVIT Input HIGH Current Breakdown Test (I/O) 100 µA Max V IN = 5.5V (An,Bn) I IL Input LOW Current −5 µA Max V IN = 0.5V (Non-I/O Pins) (Note 5) −5 V IN = 0.0V (Non-I/O Pins) I IH +IOZH Output Leakage Current 50 µA 0V–5.5V V OUT = 2.7V (An,Bn); OE = 2.0V I IL +IOZL Output Leakage Current −50 µA 0V–5.5V V OUT = 0.5V (An,Bn); OE = 2.0V I OS Output Short-Circuit Current −100 −275 mA Max V OUT = 0V (An,Bn) I CEX Output HIGH Leakage Current 50 µA Max V OUT = VCC (An,Bn) I ZZ Bus Drainage Test 100 µA 0.0V V OUT = 5.5V (An,Bn); All Others GND I CCH Power Supply Current 250 µA Max All Outputs HIGH I CCL Power Supply Current 30 mA Max All Outputs LOW I CCZ Power Supply Current 50 µA Max Outputs TRI-STATE; All Others GND I CCT Additional I CC/Input 2.5 mA Max V I = VCC − 2.1V All Other Outputs at V CC or GND I CCD Dynamic I CC (Note 5) No Load 0.18 mA/MHz Max Outputs Open OE and DIR = GND, Non-I/O = GND or V CC (Note 4) One Bit toggling, 50% duty cycle 5 www.national.com |
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