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TS321IDBVRG4 bảng dữ liệu(PDF) 11 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  Low-Power Single Operational Amplifier
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NC
VCC+
IN1
í
IN1+
VCC
í
NC
OUT
NC
RG
RIN
RF
GND
VIN
VS-
GND
VS+
GND
Run the input traces as far
away from the supply lines
as possible
Only needed for
dual-supply
operation
Place components close to
device and to each other to
reduce parasitic errors
Use low-ESR, ceramic
bypass capacitor
(or GND for single supply)
Ground (GND) plane on another layer
VOUT
+
RIN
RG
RF
VOUT
VIN
TS321
www.ti.com
SLOS489C – DECEMBER 2005 – REVISED APRIL 2015
Layout Guidelines (continued)
opposed to in parallel with the noisy trace.
Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Example.
Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
Figure 10. Operational Amplifier Schematic for Noninverting Configuration
Figure 11. Operational Amplifier Board Layout for Noninverting Configuration
Copyright © 2005–2015, Texas Instruments Incorporated
Submit Documentation Feedback
11
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