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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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1 / 5 page © Semiconductor Components Industries, LLC, 2013 November, 2013 − Rev. 9 1 Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ±20 ±40 Vdc Vpk Drain Current − Continuous (Note 1) − Pulsed (Note 2) ID IDM 0.17 0.68 Adc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR−5 = 1.0 0.75 0.062 in. 3 1 2 N−Channel SOT−23 CASE 318 STYLE 21 MARKING DIAGRAM & PIN ASSIGNMENT SA MG G SA = Device Code M = Date Code G = Pb−Free Package 3 2 1 Drain Gate 2 1 3 Source 170 mAMPS 100 VOLTS RDS(on) = 6 W See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION http://onsemi.com (*Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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