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STK611-721-E bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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STK611-721-E
No.A1718-2/9
Specifications
Absolute Maximum Ratings
at Tc = 25
°C
Parameter
Symbol
Conditions
Ratings
unit
Supply voltage
VCC
+ to -, surge
< 450V
*1
450
V
Collector-emitter voltage
VDS
+ to U (V, W) or U (V, W) to -
600
V
Output current
IO
+, -, U, V, W terminal current
±2A
Output peak current
Iop
+, -, U, V, W terminal current P.W. = 100
μs
±4A
Pre-driver voltage
VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3 terminal
0 to 15
V
FAULT/EN terminal voltage
VFAULT
FAULT/EN terminal
20
V
ITRIP terminal voltage
VITRIP
ITRIP terminal
5
V
Maximum power dissipation
Pd
MOSFET/1 channel
16.6
W
Junction temperature
Tj
MOSFET
150
°C
Storage temperature
Tstg
-40 to +125
°C
Operating substrate temperature
Tc
H-IC case temperature
-20 to +100
°C
Tightening torque
A screw part
*3
0.6
N
•m
Reference voltage is “-” terminal = “VSS” terminal voltage unless otherwise specified.
*1 Surge voltage developed by the switching operation due to the wiring inductance between “+” and “-” terminals.
*2 Terminal voltage : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS.
*3 Flatness of the heat-sink should be 0.15mm and below.
Electrical Characteristics
at Tc=25
°C, VD=15V
Parameter
Symbol
Conditions
Test circuit
min
typ
max
unit
Power output section
Drain-Source Leakage current
IDSS
VDS = 600V
Fig.1
0.1
mA
Drain-Source On Resistance
RDS(ON)
ID = 2A
Fig.2
4
Ω
Diode forward voltage
VSD
ID = -2A
Fig.3
1.5
V
Junction to case thermal resistance
θj-c(T)
MOSFET
7.5
°C/W
Control (Pre-driver) section
VD1, 2, 3 = 15V
0.05
0.2
Pre-driver power dissipation
ID
VD4 = 15V
Fig.4
1.4
4.0
mA
Input ON threshold voltage
Vinth(on)
1.5
2.1
2.5
V
Input OFF threshold voltage
Vinth(off)
HIN1, HIN2, HIN3, LIN1, LIN2,
LIN3 to VSS
0.8
1.3
1.5
V
FAULT/EN clearness delay time
FLTCLR
After each protection operation
ending
8
ms
Protection section
Pre-drive power supply
low voltage protection voltage
UVLO
8
9.8
V
Resistance for substrate temperature
monitors
Rt
Resistance between TH and
VSS terminals
90
100
110
k
Ω
Fault/EN terminal input current
IOSD
VFault = 0.15V
2
mA
ITRIP threshold voltage
VITRIP
0.41
0.465
0.52
V
tON
0.8
Switching time
tOFF
IO = 2A
Inductive load
Fig.5
1.5
μs
Reference voltage is “-” terminal = “Vss” terminal voltage unless otherwise specified.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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