1

Publication Order Number :

MCH6331/D

© Semiconductor Components Industries, LLC, 2015

July 2015 - Rev. 2

www.onsemi.com

MCH6331

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

Features

• Low On-Resistance

• 4V drive

• Pb-Free, Halogen Free and RoHS compliance

• Ultra small package MCPH6 (2.0mm×2.1mm×0.85mmt)

Typical Applications

• Load Switch

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

−30

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

−3.5

A

Drain Current (Pulse)

PW

≤ 10μs, duty cycle ≤ 1%

IDP

−14

A

Power Dissipation

When mounted on ceramic substrate

(1200mm

PD

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

2 : This product is designed to “ESD immunity<200V*”, so please take care when

handling.

*Machine Model

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction to Ambient

RθJA

83.3

°C/W

When mounted on ceramic substrate

(1200mm

Power MOSFET

–30V, 98mΩ, –3.5A, Single P-Channel

VDSS

RDS(on) Max

ID Max

−30V

98mΩ@

−10V

−3.5A

171mΩ@

−4.5V

199mΩ@

−4V

ELECTRICAL CONNECTION

P-Channel

PACKING TYPE : TL

MARKING

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

TL

3

4

1, 2, 5, 6

1:Drain

2:Drain

3:Gate

4:Source

5:Drain

6:Drain

YF