1

Publication Order Number :

MCH6320/D

www.onsemi.com

© Semiconductor Components Industries, LLC, 2015

March 2015 - Rev. 3

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

MCH6320

Features

• 1.8V Drive

• High Speed Switching

• Pb-Free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta = 25

°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

−12

V

Gate to Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

−3.5

A

Drain Current (Pulse)

PW

≤10μs, duty cycle≤1%

IDP

−14

A

Power Dissipation

When mounted on ceramic substrate

(1200mm

PD

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient

RθJA

83.3

°C/W

When mounted on ceramic substrate

(1200mm

Power MOSFET

–12V, 70mΩ, –3.5A, Single P-Channel

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Electrical Connection

P-Channel

Packing Type : TL

Marking

VDSS

RDS(on) Max

ID Max

−12V

70mΩ@

−4.5V

−3.5A

115mΩ@

−2.5V

215mΩ@

−1.8V

3

4

1, 2, 5, 6

1:Drain

2:Drain

3:Gate

4:Source

5:Drain

6:Drain

TL

JU