MCH3477

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2

Electrical Characteristics at Ta

 25C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

1

A

Gate to Source Leakage Current

IGSS

VGS=±8V, VDS=0V

10

A

Gate Threshold Voltage

VGS(th)

VDS=10V, ID=1mA

0.4

1.3

V

Forward Transconductance

gFS

VDS=10V, ID=2A

2.0

3.4

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=2A, VGS=4.5V

29

38

m



RDS(on)2

ID=1A, VGS=2.5V

43

61

m



RDS(on)3

ID=0.5A, VGS=1.8V

69

99

m



Input Capacitance

Ciss

VDS=10V, f=1MHz

410

pF

Output Capacitance

Coss

84

pF

Reverse Transfer Capacitance

Crss

59

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

7.5

ns

Rise Time

tr

26

ns

Turn-OFF Delay Time

td(off)

38

ns

Fall Time

tf

32

ns

Total Gate Charge

Qg

VDS=10V, VGS=4.5V, ID=4.5A

5.1

nC

Gate to Source Charge

Qgs

0.7

nC

Gate to Drain “Miller” Charge

Qgd

1.7

nC

Forward Diode Voltage

VSD

IS=4.5A, VGS=0V

0.78

1.2

V

Switching Time Test Circuit

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

PW=10

s

D.C.≤1%

P.G

50



G

S

D

ID=2A

RL=5

VDD=10V

VOUT

MCH3477

VIN

4.5V

0V

VIN