MCH3476-TL-W datasheet(1/5 Pages) ONSEMI

tên linh kiện	MCH3476-TL-W

Giải thích chi tiết về linh kiện	Single N-Channel Power MOSFET

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1

Publication Order Number :

MCH3476/D

www.onsemi.com

March 2015 - Rev. 2

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

MCH3476

Features

• Low On-Resistance

• 1.8V Drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta = 25

°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

20

V

Gate to Source Voltage

VGSS

±12

V

Drain Current (DC)

ID

2A

Drain Current (Pulse)

PW

≤10μs, duty cycle≤1%

IDP

8

A

Power Dissipation

When mounted on ceramic substrate

(900mm

2 × 0.8mm)

PD

0.8

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient

RθJA

156.2

°C/W

When mounted on ceramic substrate

(900mm

2 × 0.8mm)

Power MOSFET

20V, 125mΩ, 2A, Single N-Channel

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Electrical Connection

N-Channel

Packing Type : TL

Marking

VDSS

RDS(on) Max

ID Max

20V

125mΩ@ 4.5V

2A

190mΩ@ 2.5V

310mΩ@ 1.8V

1

2

3

1:Gate

2:Source

3:Drain

TL

FH

FH : Device Code

Số phần tương tự - MCH3476-TL-W

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