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MCH3476-TL-W bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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1 / 5 page 1 Publication Order Number : MCH3476/D www.onsemi.com © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. MCH3476 Features • Low On-Resistance • 1.8V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 2A Drain Current (Pulse) PW ≤10μs, duty cycle≤1% IDP 8 A Power Dissipation When mounted on ceramic substrate (900mm 2 × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient RθJA 156.2 °C/W When mounted on ceramic substrate (900mm 2 × 0.8mm) Power MOSFET 20V, 125mΩ, 2A, Single N-Channel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Connection N-Channel Packing Type : TL Marking VDSS RDS(on) Max ID Max 20V 125mΩ@ 4.5V 2A 190mΩ@ 2.5V 310mΩ@ 1.8V 1 2 3 1:Gate 2:Source 3:Drain TL FH FH : Device Code |
Số phần tương tự - MCH3476-TL-W |
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Mô tả tương tự - MCH3476-TL-W |
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