Features

•

ON-resistance Nch : RDS(on)1=49mΩ(typ.)

Pch : RDS(on)1=78mΩ(typ.)

•

4V drive

•

Halogen free compliance

•

Nch+Pch MOSFET

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

N-channel

P-channel

Unit

Drain-to-Source Voltage

VDSS

30

--30

V

Gate-to-Source Voltage

VGSS

±20

±20

V

Drain Current (DC)

ID

4.5

--3.5

A

Drain Current (PW≤10μs)

IDP

Duty cycle≤1%

5

--4

A

Drain Current (PW≤10μs)

IDP

Duty cycle≤1%

18

--14

A

Allowable Power Dissipation

PD

1.4

W

Total Dissipation

PT

1.7

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Package Dimensions

unit : mm (typ)

7072-001

Ordering number : EN8998C

Product & Package Information

• Package

: SOIC8

• JEITA, JEDEC

: SC-87, SOT-96

• Minimum Packing Quantity : 2,500 pcs./reel

Packing Type : TL

Marking

Electrical Connection

4.9

0.22

14

5

8

0.445

1.27

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

SOIC8

TL

FW344

LOT No.

A

8765

1234

FW344A-TL-2W

91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

FW344A

Power MOSFET

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.