Publication Order Number:

MMSF1310/D

© Semiconductor Components Industries, LLC, 2000

September, 2004 − Rev. XXX

1

MMSF1310

Preferred Device

Power MOSFET

10 Amps, 30 Volts

N−Channel SO−8

and true logic level performance. They are capable of withstanding high

energy in the avalanche and commutation modes and the drain−to−source

diode has a very low reverse recovery time. MiniMOS

t devices are

designed for use in low voltage, high speed switching applications where

power efficiency is important. Typical applications are dc−dc converters,

and power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be used

for low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

Converter

Parameter

Symbol

Max

Unit

Drain−to−Source Voltage

30

Vdc

30

Vdc

Gate−to−Source Voltage − Continuous

± 20

Vdc

(Note 1.)

Pulsed Drain Current (Note 2.)

10

50

Adc

(Note 1.)

2.5

W

Operating and Storage Temperature Range

− 55 to

150

°C

THERMAL RESISTANCE

Junction−to−Ambient (Note 1.)

50

°C/W

1. When mounted on 1

″ square FR−4 or G−10 board

2. Repetitive rating; pulse width limited by maximum junction temperature.

Source

1

2

3

4

8

7

6

5

Top View

Source

Source

Gate

Drain

Drain

Drain

Drain

1

8

10 AMPERES

30 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MMSF1310R2

SO−8

2500 Tape & Reel

SO−8

CASE 751

STYLE 12

http://onsemi.com

N−Channel

LYWW

MARKING

DIAGRAM

D

S

G

S1310

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.