MMSF4P01HD datasheet(2/12 Pages) ONSEMI

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MMSF4P01HD

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

12

−

22

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 12 Vdc, VGS = 0 Vdc)

(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

10

µAdc

Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 3.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

0.7

−

0.95

2.7

1.1

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 2.7 Vdc, ID = 2.0 Adc)

RDS(on)

−

0.073

0.08

0.09

Ohm

Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)

gFS

3.0

7.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

10 Vd

V

0Vd

Ciss

−

1270

1700

pF

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

935

1300

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

−

420

600

SWITCHING CHARACTERISTICS (Note 4.)

Turn−On Delay Time

td(on)

−

25

35

ns

Rise Time

(VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS =27Vdc

tr

−

250

350

Turn−Off Delay Time

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(off)

−

58

80

Fall Time

RG 6.0 Ω)

tf

−

106

150

Turn−On Delay Time

td(on)

−

17

25

Rise Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS =45Vdc

tr

−

71

100

Turn−Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

−

95

140

Fall Time

RG 6.0 Ω)

tf

−

106

150

Gate Charge

QT

−

24

34

nC

(VDS = 10 Vdc, ID = 4.0 Adc,

Q1

−

2.4

−

(VDS

10 Vdc, ID

4.0 Adc,

VGS = 4.5 Vdc)

Q2

−

11.4

−

Q3

−

8.4

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 3.)

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

1.3

1.1

1.8

−

Vdc

Reverse Recovery Time

trr

−

134

−

ns

(IS = 4.0 Adc, VGS = 0 Vdc,

ta

−

66

−

(IS

4.0 Adc, VGS

0 Vdc,

dIS/dt = 100 A/µs)

tb

−

68

−

Reverse Recovery Stored Charge

QRR

−

0.33

−

µC

1. Negative sign for P−Channel device omitted for clarity.

3. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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