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2 / 12 page MMSF3P03HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 30 − − 30 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − 5.0 100 nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 3.9 2.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc) (VGS = 4.5 Vdc, ID = 1.5 Adc) RDS(on) − − 0.080 0.090 0.100 0.110 Ohm Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) gFS 3.0 5.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vd V 0Vd Ciss − 1015 1420 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 470 660 Transfer Capacitance f = 1.0 MHz) Crss − 135 190 SWITCHING CHARACTERISTICS (Note 4.) Turn−On Delay Time td(on) − 26 52 ns Rise Time (VDS = 15 Vdc, ID = 3.0 Adc, VGS =45Vdc tr − 102 204 Turn−Off Delay Time VGS = 4.5 Vdc, RG = 6.0 Ω) td(off) − 67 134 Fall Time RG 6.0 Ω) tf − 69 138 Turn−On Delay Time td(on) − 14 28 Rise Time (VDS = 15 Vdc, ID = 3.0 Adc, VGS =10Vdc tr − 32 64 Turn−Off Delay Time VGS = 10 Vdc, RG = 6.0 Ω) td(off) − 104 208 Fall Time RG 6.0 Ω) tf − 66 132 Gate Charge QT − 32.4 45 nC (VDS = 24 Vdc, ID = 3.0 Adc, Q1 − 2.7 − (VDS 24 Vdc, ID 3.0 Adc, VGS = 10 Vdc) Q2 − 9.0 − Q3 − 6.9 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1.) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 1.3 0.85 2.0 − Vdc Reverse Recovery Time trr − 31 − ns (IS = 3.0 Adc, ta − 22 − (IS 3.0 Adc, dIS/dt = 100 A/µs) tb − 9.0 − Reverse Recovery Stored Charge QRR − 0.034 − µC 1. Negative sign for P−Channel device omitted for clarity. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
Số phần tương tự - MMSF3P03HDR2 |
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Mô tả tương tự - MMSF3P03HDR2 |
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