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1 / 7 page 71112 TKIM TC-00002779/N1805QA MSIM TB-00001098 No.8590-1/7 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L 10.0 5.3 1.27 0.8 2.54 2.54 0.254 4.5 8.0 1.3 0.5 12 3 4 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 2SJ665 P-Channel Power MOSFET –100V, –27A, 77mΩ, TO-263-2L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800 pcs./reel Packing Type: DL Marking Electrical Connection Features • ON-resistance RDS(on)1=59mΩ(typ.) • Input capacitance Ciss=4200pF (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --27 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --108 A Allowable Power Dissipation PD Tc=25°C 65 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 48 mJ Avalanche Current *2 IAV --27 A Note : *1 VDD=--30V, L=100μH, IAV=--27A (Fig.1) *2 L≤100μH, single pulse Package Dimensions unit : mm (typ) 7535-001 Ordering number : EN8590A 2SJ665-DL-1E 1 3 2, 4 J665 LOT No. DL |
Số phần tương tự - 2SJ665-DL-1E |
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Mô tả tương tự - 2SJ665-DL-1E |
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