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NXP Semiconductors
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
PBSS4112PAN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
29 November 2012
9 / 17
006aad171
10-5
10
10-2
10-4
102
10-1
tp (s)
10-3
103
1
10
102
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, mounting pad for collector 1 cm2
Fig. 9. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCB = 96 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
ICBO
collector-base cut-off
current
VCB = 96 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
VCE = 2 V; IC = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
240
375
-
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
60
100
-
hFE
DC current gain
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
30
45
-
IC = 500 mA; IB = 50 mA; Tamb = 25 °C
-
90
120
mV
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
205
260
mV
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
170
220
mV
RCEsat
collector-emitter
saturation resistance
IC = 500 mA; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
240


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