BCW69LT1 datasheet(1/8 Pages) ONSEMI

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Giải thích chi tiết về linh kiện	General Purpose Transistors

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August, 2006 − Rev. 2

1

Publication Order Number:

BCW69LT1/D

BCW69LT1

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

−45

Vdc

Emitter−Base Voltage

VEBO

−5.0

Vdc

Collector Current — Continuous

IC

−100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board (1)

TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance, Junction to

Ambient

RθJA

556

°C/W

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance, Junction to

Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

−55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0)

V(BR)CEO

−45

—

Vdc

Collector−Emitter Breakdown Voltage (IC = −100 μAdc, VEB = 0)

V(BR)CES

−50

—

Vdc

Emitter−Base Breakdown Voltage (IE = −10 μAdc, IC = 0)

V(BR)EBO

−5.0

—

Vdc

Collector Cutoff Current

(VCB = −20 Vdc, IE = 0)

(VCB = −20 Vdc, IE = 0, TA = 100°C)

ICBO

—

−100

−10

nAdc

μAdc

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

http://onsemi.com

1

2

3

CASE 318 −08, STYLE 6

SOT−23 (TO −236AB)

COLLECTOR

3

1

BASE

2

EMITTER

Số phần tương tự - BCW69LT1

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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WILLAS ELECTRONIC CORP	BCW69LT1	417Kb / 7P	General Purpose Transistors

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