MSAGX75L60A datasheet(1/2 Pages) MICROSEMI

tên linh kiện	MSAGX75L60A

Giải thích chi tiết về linh kiện	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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MSAGX75L60A

600 Volts

75 Amps

1.8 Volts vce(sat)

Features

• Rugged polysilicon gate cell structure

• high current handling capability, latch-proof

• Hermetically sealed, surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Reverse polarity available upon request: MSAGX75L60B

•

low VCE(sat) IGBT, low conduction losses

DESCRIPTION

SYMBOL

MAX.

UNIT

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)

@ TJ

≥ 25°C

BVCES

600

Volts

Collector-to-Gate Breakdown Voltage @ TJ

≥ 25°C, RGS= 1 MΩ

BVCGR

600

Volts

Continuous Gate-to-Emitter Voltage

VGES

+/-20

Volts

Transient Gate-to-Emitter Voltage

VGEM

+/-30

Volts

Continuous Collector Current

Tj= 25

°C

Tj=

90

°C

IC25

IC90

75

60

Amps

Peak Collector Current, pulse width limited by Tjmax,

ICM

200

Amps

Safe Operating Area (RBSOA) @ VGE= 15V, L= 30

µH (clamped inductive

load), RG= 2.7

Ω, Tj= 125°C, VCE= 0.8 x VCES

Imax

100

Amps

Power Dissipation

PD

300

Watts

Junction Temperature Range

Tj

-55 to +150

°C

Storage Temperature Range

Tstg

-55 to +150

°C

Thermal Resistance, Junction to Case

θ

JC

0.25

°C/W

Maximum Ratings @ 25

°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0297A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

N-CHANNEL

INSULATED GATE

BIPOLAR TRANSISTOR

COLLECTOR

GATE

EMITTER

Số phần tương tự - MSAGX75L60A

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Microsemi Corporation	MSAGX75F60A	45Kb / 2P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Mô tả tương tự - MSAGX75L60A

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Số phần tương tự - MSAGX75L60A

Mô tả tương tự - MSAGX75L60A

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