MSAFR30N20A datasheet(1/2 Pages) MICROSEMI

tên linh kiện	MSAFR30N20A

Giải thích chi tiết về linh kiện	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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MSAER30N20A

MSAFR30N20A

200 Volts

30 Amps

85 m

Ω

Features

• Ultrafast rectifier in parallel with the body diode (MSAE type only)

• Rugged polysilicon gate cell structure

• Increased Unclamped Inductive Switching (UIS) capability

• Hermetically sealed, surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Reverse polarity available upon request

DESCRIPTION

SYMBOL

MAX.

UNIT

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

@ TJ

≥ 25°C

BVDSS

200

Volts

Drain-to-Gate Breakdown Voltage @ TJ

≥ 25°C, RGS= 1 MΩ

BVDGR

200

Volts

Continuous Gate-to-Source Voltage

VGS

+/-20

Volts

Transient Gate-to-Source Voltage

VGSM

+/-30

Volts

Continuous Drain Current

Tj= 25

°C

Tj=

100

°C

ID25

ID100

30

19

Amps

Peak Drain Current, pulse width limited by TJmax

IDM

120

Amps

Repetitive Avalanche Current

IAR

30

Amps

Repetitive Avalanche Energy

EAR

15

mJ

Single Pulse Avalanche Energy

EAS

200

mJ

Voltage Rate of Change of the Recovery Diode

@ IS

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C

dv/dt

5.0

V/ns

Power Dissipation

PD

300

Watts

Junction Temperature Range

Tj

-55 to +150

°C

Storage Temperature Range

Tstg

-55 to +150

°C

Continuous Source Current (Body Diode)

IS

30

Amps

Pulse Source Current (Body Diode)

ISM

120

Amps

Thermal Resistance, Junction to Case

θ

JC

0.4

°C/W

Maximum Ratings @ 25

°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0256B

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

N-CHANNEL

ENHANCEMENT MODE

POWER MOSFET

DRAIN

SOURCE

GATE

Số phần tương tự - MSAFR30N20A

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Mô tả tương tự - MSAFR30N20A

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Số phần tương tự - MSAFR30N20A

Mô tả tương tự - MSAFR30N20A

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