MSAFR12N50A datasheet(1/2 Pages) MICROSEMI

tên linh kiện	MSAFR12N50A

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MSAER12N50A

MSAFR12N50A

500 Volts

12 Amps

400 m

Ω

Features

• Ultrafast rectifier in parallel with the body diode (MSAE type only)

• Rugged polysilicon gate cell structure

• Increased Unclamped Inductive Switching (UIS) capability

• Hermetically sealed, surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Reverse polarity available upon request

DESCRIPTION

SYMBOL

MAX.

UNIT

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

@ TJ

≥ 25°C

BVDSS

500

Volts

Drain-to-Gate Breakdown Voltage @ TJ

≥ 25°C, RGS= 1 MΩ

BVDGR

500

Volts

Continuous Gate-to-Source Voltage

VGS

+/-20

Volts

Transient Gate-to-Source Voltage

VGSM

+/-30

Volts

Continuous Drain Current

Tj= 25

°C

Tj=

100

°C

ID25

ID100

12

8

Amps

Peak Drain Current, pulse width limited by TJmax

IDM

48

Amps

Repetitive Avalanche Current

IAR

12

Amps

Repetitive Avalanche Energy

EAR

tbd

mJ

Single Pulse Avalanche Energy

EAS

8

mJ

Voltage Rate of Change of the Recovery Diode

@ IS

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C

dv/dt

3.5

V/ns

Power Dissipation

PD

300

Watts

Junction Temperature Range

Tj

-55 to +150

°C

Storage Temperature Range

Tstg

-55 to +150

°C

Continuous Source Current (Body Diode)

IS

12

Amps

Pulse Source Current (Body Diode)

ISM

48

Amps

Thermal Resistance, Junction to Case

θ

JC

0.4

°C/W

Maximum Ratings @ 25

°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0266B

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

N-CHANNEL

ENHANCEMENT MODE

POWER MOSFET

DRAIN

SOURCE

GATE

Số phần tương tự - MSAFR12N50A

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