© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 1

1

Publication Order Number:

MTV20N50E/D

MTV20N50E

Designer’s™ Data Sheet

Power Field Effect

Transistor

N−Channel Enhancement−Mode Silicon

Gate

size of any standard, plastic, surface mount power semiconductor. This

allows it to be used in applications that require surface mount

high voltage MOSFET uses an advanced termination scheme to provide

enhanced voltage−blocking capability without degrading performance

over time. In addition, this advanced TMOS E−FET is designed to

withstand high energy in the avalanche and commutation modes. The

new energy efficient design also offers a drain−to−source diode with a

fast recovery time. Designed for high voltage, high speed switching

applications in surface mount PWM motor controls and both ac−dc and

dc−dc power supplies. These devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating areas

are critical and offer additional safety margin against unexpected

voltage transients.

Fast Recovery Diode

to Part Number

http://onsemi.com

TMOS POWER FET

20 AMPERES, 500 VOLTS

CASE 433−01

Style 2

®

D

S

G

N−Channel