SIZ998DT datasheet(3/14 Pages) TFUNK

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SiZ998DT

www.vishay.com

Vishay Siliconix

S15-0144-Rev. A, 02-Feb-15

3

Document Number: 62979

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Dynamic a

Turn-On Delay Time

td(on)

Channel-1

VDD = 15 V, RL = 1.5

Ω

ID

≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

Channel-2

VDD = 15 V, RL = 1.5

ID

≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

Ch-1

-

15

30

ns

Ch-2

-

25

50

Rise Time

tr

Ch-1

-

65

130

Ch-2

-

65

130

Turn-Off Delay Time

td(off)

Ch-1

-

10

20

Ch-2

-

17

34

Fall Time

tf

Ch-1

-

10

20

Ch-2

-

10

20

Turn-On Delay Time

td(on)

Channel-1

VDD = 15 V, RL = 1.5

Ω

ID

≅ 10 A, VGEN = 10 V, Rg = 1 Ω

Channel-2

VDD = 15 V, RL = 1.5

Ω

ID

≅ 10 A, VGEN = 10 V, Rg = 1 Ω

Ch-1

-

10

20

Ch-2

-

15

30

Rise Time

tr

Ch-1

-

25

50

Ch-2

-

20

40

Turn-Off Delay Time

td(off)

Ch-1

-

15

30

Ch-2

-

22

44

Fall Time

tf

Ch-1

-

10

20

Ch-2

-

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

Ch-1

-

20

A

Ch-2

-

60

Pulse Diode Forward Current (t = 100 μs)

ISM

Ch-1

-

90

Ch-2

-

130

Body Diode Voltage

VSD

IS = 10 A, VGS = 0 V

Ch-1

-

0.8

1.2

V

IS = 2 A, VGS = 0 V

Ch-2

-

0.41

0.53

Body Diode Reverse Recovery Time

trr

Channel-1

IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C

Channel-2

IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C

Ch-1

-

30

60

ns

Ch-2

-

47

94

Body Diode Reverse Recovery Charge

Qrr

Ch-1

-

11

22

nC

Ch-2

-

55

110

Reverse Recovery Fall Time

ta

Ch-1

-

18

-

ns

Ch-2

-

27

-

Reverse Recovery Rise Time

tb

Ch-1

-

12

-

Ch-2

-

20

-

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Số phần tương tự - SIZ998DT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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