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SiZ342DT

www.vishay.com

Vishay Siliconix

S15-0031-Rev. B, 19-Jan-15

1

Document Number: 62949

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 30 V (D-S) MOSFET

Ordering Information:

SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

•PowerPAIR® optimizes high-side and low-side

MOSFETs for synchronous buck converters

• TrenchFET® Gen IV power MOSFETs

• 100 % Rg and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous buck

- Battery charging

- Computer system power

- Graphic cards

•POL

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω) MAX.

ID (A)

Qg (Typ.)

Channel-1

and

Channel-2

30

0.0115 at VGS = 10 V

30 a

4.5 nC

0.0153 at VGS = 4.5 V

27.5

PowerPAIR® 3 x 3

Top View

1

3 mm

1

3 m

m

3 mm

Bottom View

4

D

1

G

1

2

D

1

3

D

1

S

2

5

G

2

8

S

2

7

S

2

6

D1

S1/D2

(Pin 9)

D1

S2

N-Channel 2

MOSFET

N-Channel 1

MOSFET

G1

S1/D2

G2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

CHANNEL-1 AND CHANNEL-2

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+20 / -16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

30 a

A

TC = 70 °C

26.5

TA = 25 °C

15.6 b, c

TA = 70 °C

12.4 b, c

Pulsed Drain Current (t = 100 μs)

IDM

100

Continuous Source Drain Diode Current

TC = 25 °C

IS

13.9

TA = 25 °C

3.1 b, c

Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5mJ

Maximum Power Dissipation

TC = 25 °C

PD

16.7

W

TC = 70 °C

10.7

TA = 25 °C

3.7 b, c

TA = 70 °C

2.4 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

Soldering Recommendations (Peak Temperature) d, e

260

Số phần tương tự - SIZ342DT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	SIZ342DT	1Mb / 11P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 19-Jan-15
	SIZ342DT	326Kb / 10P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SIZ342DT	326Kb / 10P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022

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Mô tả tương tự - SIZ342DT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
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	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
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Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

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