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SIZ342DT bảng dữ liệu(PDF) 1 Page - Vishay Telefunken |
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SIZ342DT bảng dữ liệu(HTML) 1 Page - Vishay Telefunken |
1 / 10 page SiZ342DT www.vishay.com Vishay Siliconix S15-0031-Rev. B, 19-Jan-15 1 Document Number: 62949 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 30 V (D-S) MOSFET Ordering Information: SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES •PowerPAIR® optimizes high-side and low-side MOSFETs for synchronous buck converters • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous buck - Battery charging - Computer system power - Graphic cards •POL Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) ( Ω) MAX. ID (A) Qg (Typ.) Channel-1 and Channel-2 30 0.0115 at VGS = 10 V 30 a 4.5 nC 0.0153 at VGS = 4.5 V 27.5 PowerPAIR® 3 x 3 Top View 1 3 mm 3 mm 1 3 m m 3 mm Bottom View 4 D 1 1 G 1 2 D 1 3 D 1 S 2 5 G 2 8 S 2 7 S 2 6 D1 S1/D2 (Pin 9) D1 S2 N-Channel 2 MOSFET N-Channel 1 MOSFET G1 S1/D2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS +20 / -16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 30 a A TC = 70 °C 26.5 TA = 25 °C 15.6 b, c TA = 70 °C 12.4 b, c Pulsed Drain Current (t = 100 μs) IDM 100 Continuous Source Drain Diode Current TC = 25 °C IS 13.9 TA = 25 °C 3.1 b, c Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5mJ Maximum Power Dissipation TC = 25 °C PD 16.7 W TC = 70 °C 10.7 TA = 25 °C 3.7 b, c TA = 70 °C 2.4 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C Soldering Recommendations (Peak Temperature) d, e 260 |
Số phần tương tự - SIZ342DT |
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Mô tả tương tự - SIZ342DT |
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