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Document Number: 67580
S11-0611-Rev. A, 04-Apr-11
Vishay Siliconix
Si1416EDH
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
34
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
- 3.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 0.5
µA
VDS = 0 V, VGS = ± 12 V
± 20
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.1 A
0.047
0.058
Ω
VGS = 4.5 V, ID = 2 A
0.052
0.064
VGS = 2.5 V, ID = 1 A
0.062
0.077
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.1 A
13
S
Dynamicb
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 4 A
7.5
12
nC
VDS = 15 V, VGS = 4.5 V, ID = 4 A
3.5
5.5
Gate-Source Charge
Qgs
1.8
Gate-Drain Charge
Qgd
0.7
Gate Resistance
Rg
f = 1 MHz
0.6
3.3
6.6
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 4.7 Ω
ID ≅ 3.2 A, VGEN = 4.5 V, Rg = 1 Ω
20
40
ns
Rise Time
tr
60
120
Turn-Off DelayTime
td(off)
25
50
Fall Time
tf
45
90
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 4.7 Ω
ID ≅ 3.2 A, VGEN = 10 V, Rg = 1 Ω
1.5
5
Rise Time
tr
30
60
Turn-Off DelayTime
td(off)
15
30
Fall Time
tf
50
100
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
3.9
A
Pulse Diode Forward Current
ISM
15
Body Diode Voltage
VSD
IS = 3.2 A, VGS = 0 V
0.87
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
410
nC
Reverse Recovery Fall Time
ta
5.3
ns
Reverse Recovery Rise Time
tb
4.6


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