SI1553CDL datasheet(2/16 Pages) TFUNK

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Giải thích chi tiết về linh kiện	N- and P-Channel 20 V (D-S) MOSFET

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Si1553CDL

www.vishay.com

Vishay Siliconix

S14-1130-Rev. B, 02-Jun-14

2

Document Number: 67693

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP. a

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch

20

-

V

VGS = 0 V, ID = -250 μA

P-Ch

-20

-

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 μA

N-Ch

-

24

-

mV/°C

ID = -250 μA

P-Ch

-

-13

-

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = 250 μA

N-Ch

-

-1.8

-

ID = -250 μA

P-Ch

-

2.3

-

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch

0.6

-

1.5

V

VDS = VGS, ID = -250 μA

P-Ch

-0.6

-

-1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

N-Ch

-

± 100

nA

P-Ch

-

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

-

1

μA

VDS = -20 V, VGS = 0 V

P-Ch

-

-1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

N-Ch

-

10

VDS = -20 V, VGS = 0 V, TJ = 55 °C

P-Ch

-

-10

On-State Drain Current b

ID(on)

VDS = 5 V, VGS = 5 V

N-Ch

2

-

A

VDS = -5 V, VGS = -5 V

P-Ch

-1

-

Drain-Source On-State Resistance b

RDS(on)

VGS = 4.5 V, ID = 0.7 A

N-Ch

-

0.325

0.390

Ω

VGS = -4.5 V, ID = -0.4 A

P-Ch

-

0.708

0.850

VGS = 2.7 V, ID = 0.4 A

N-Ch

-

0.425

0.510

VGS = -2.7 V, ID = -0.2 A

P-Ch

-

1.130

1.350

VGS = 2.5 V, ID = 0.4 A

N-Ch

-

0.462

0.578

VGS = -2.5V, ID = -0.2 A

P-Ch

-

1.230

1.480

Forward Transconductance b

gfs

VDS = 15 V, ID = 0.7 A

N-Ch

-

1.5

-

S

VDS = -15 V, ID = -0.5 A

P-Ch

-

0.8

-

Dynamic a

Input Capacitance

Ciss

N-Channel

VDS = 10 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = -10 V, VGS = 0 V, f = 1 MHz

N-Ch

-

38

-

pF

P-Ch

-

43

-

Output Capacitance

Coss

N-Ch

-

14

-

P-Ch

-

16

-

Reverse Transfer Capacitance

Crss

N-Ch

-

6

-

P-Ch

-

10

-

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 0.7 A

N-Ch

-

1.2

1.8

nC

VDS = -10 V, VGS = -10 V, ID = -0.5 A

P-Ch

-

1.9

3

N-Channel

VDS = 10 V, VGS = 4.5 V ID = 0.5 A

P-Channel

VDS = -10 V, VGS = -4.5 V, ID = -0.4 A

N-Ch

-

0.55

1.1

P-Ch

-

0.95

1.5

Gate-Source Charge

Qgs

N-Ch

-

0.15

-

P-Ch

-

0.25

-

Gate-Drain Charge

Qgd

N-Ch

-

0.15

-

P-Ch

-

0.25

-

Gate Resistance

Rg

f = 1 MHz

N-Ch

1.5

7.2

14.4

Ω

P-Ch

2.1

10.3

20.6

Số phần tương tự - SI1553CDL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	SI1553CDL	262Kb / 16P	N- and P-Channel 20 V (D-S) MOSFET Rev. A, 02-May-11
Vishay Siliconix	SI1553CDL	278Kb / 16P	N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI1553CDL-T1-GE3	1Mb / 9P	N- and P- Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1553CDL-T1-GE3	278Kb / 16P	N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI1553CDL	278Kb / 16P	N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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