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BTB25G-8-B-TA3-T bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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BTB25G-8-B-TA3-T bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BTB25 Preliminary TRIAC UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R220-026.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT RMS On-State Current (Full Sine Wave) TC=75°C IT(RMS) 25 A F=50 Hz t=20ms 250 A Non Repetitive Surge Peak On-State Current (Full Cycle, TJ initial=25°C) F=60 Hz t=16.7ms ITSM 260 A I 2t Value for Fusing tP=10ms I 2t 340 A 2s Critical Rate of Rise of On-State Current IG=2xIGT, tr≤100ns F=120 Hz TJ=125°C dI/dt 50 A/µs Non Repetitive Surge Peak Off-State Voltage tP=10ms TJ=25°C VDSM/VRSM VDRM/VRRM+100 V Peak Gate Current tP=20µs TJ=125°C IGM 4 A Average Gate Power Dissipation TJ=125°C PG(AV) 1 W Operating Junction Temperature TJ -40~+125 °C Storage Junction Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 60 °C/W Junction to Case (AC) θJC 0.8 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified) FOR STANDARD TYPE (4 QUADRANTS) B PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT I-II-III 50 mA Gate Trigger Current (Note 1) IGT IV 100 mA Gate Trigger Voltage VGT VD=12V, RL=33Ω ALL 1.3 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3kΩ, TJ=125°C ALL 0.2 V Holding Current Note 2) IH IT=500mA 80 mA I-III-IV 70 mA Latching Current IL IG=1.2 IGT II 160 mA Critical Rate of Rise of Off-State Voltage (Note 2) dV/dt VD=67%VDRM, Gate Open, TJ=125°C 500 V/µs Critical Rate of Rise of Off-State Voltage at Commutation(Note 2) (dV/dt)c (dI/dt)c=13.3A/ms, TJ= 125°C 10 V/µs STATIC CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Peak On-State Voltage (Note 2) VTM ITM=35A, tP=380μs TJ=25°C 1.55 V Threshold Voltage (Note 2) VTO TJ=125°C 0.85 V Dynamic Resistance (Note 2) RD TJ=125°C 16 mΩ IDRM TJ=25°C 5 μA Repetitive Peak Off-State Current IRRM VDRM=VRRM TJ=125°C 3 mA Notes: 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of MT2 referenced to MT1. |
Số phần tương tự - BTB25G-8-B-TA3-T |
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Mô tả tương tự - BTB25G-8-B-TA3-T |
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