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2 / 3 page Z00607 Preliminary TRIAC UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-030.b ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltage VDRM 600 V RMS On-State Current (Full Sine Wave) TMB=50°C IT(RMS) 0.8 A Non Repetitive Surge Peak On-State Current (Full Cycle, TJ initial=25°C) F=50Hz t=20ms ITSM 9 A F=60Hz t=16.7ms 9.5 I 2t Value for Fusing tP=10ms I 2 t 0.45 A 2s Critical Rate of Rise of On-State Current IG=2×IGT, tr≤100ns F=120Hz TJ=110°C dl/dt 20 A/µs Peak Gate Current tP=20µs TJ=110°C IGM 1 A Average Gate Power Dissipation TJ=110°C PG(AV) 0.1 W Operating Junction Temperature Range TJ -40~+110 °C Storage Junction Temperature Range TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Lead (AC) θJLEAD 60 °C/W Junction to Ambient θJA 150 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Trigger Current (Note 1) IGT VD=12V, RL=30Ω I-II-III 5 mA IV 7 Gate Trigger Voltage VGT ALL 1.3 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3KΩ, TJ=110°C ALL 0.2 V Holding Current (Note 2) IH IT=200mA 5 mA Latching Current IL IG=1.2IGT I-III-IV 10 mA II 20 Critical Rate of Rise of Off-State Voltage (Note 2) dV/dt VD=67%VDRM, Gate Open, TJ=110°C 10 V/µs Critical Rate of Rise of Off-State Voltage at Commutation (Note 2) (dV/dt)c (dV/dt)c=0.35A/ms, TJ=110°C 1.5 V/µs Peak On-State Voltage (Note 2) VTM ITM=1.1A, tp=380μs TJ=25°C 1.5 V Threshold Voltage (Note 2) VTO TJ=110°C 0.95 V Dynamic Resistance (Note 2) RD TJ=110°C 420 mΩ Repetitive Peak Off-State Current IDRM VDRM=VRRM=600V TJ=25°C 5 μA IRRM TJ=110°C 0.1 mA Notes: 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of MT2 referenced to MT1. |
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