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6N70KG-TMS4-T bảng dữ liệu(PDF) 4 Page - Unisonic Technologies |
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4 / 7 page 6N70K-MTQ Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-051.B ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 700 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA 0.79 V/°C VDS=700V, VGS=0V 1 µA Drain-Source Leakage Current IDSS VDS=560V, TC=125°C 250 µA Forward VGS=+30V, VDS=0V +100 nA Gate-Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A (Note 1) 2.0 2.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS 480 pF Output Capacitance COSS 65 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz (Note 1, 2) 7.5 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 70 ns Rise Time tR 61 ns Turn-OFF Delay Time tD(OFF) 140 ns Fall-Time tF VDD=30V, ID=0.5A, RG=25Ω VGS=10V 41 ns Total Gate Charge QG 45 nC Gate to Source Charge QGS 7 nC Gate to Drain Charge QGD VGS=10V, VDS=50V, ID=1.3A, IG=100µA (Note 1, 2) 7 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 6 A Maximum Body-Diode Pulsed Current (Note 3) ISM Integral reverse pn-diode in the MOSFET 24 A Drain-Source Diode Forward Voltage (Note 2) VSD IS=6A, VGS=0V, TJ = 25°C 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature |
Số phần tương tự - 6N70KG-TMS4-T |
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Mô tả tương tự - 6N70KG-TMS4-T |
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