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LM26001B bảng dữ liệu(PDF) 2 Page - Texas Instruments

tên linh kiện LM26001B
Giải thích chi tiết về linh kiện  LM26001B 1.5A Switching Regulator with High Efficiency Sleep Mode
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LM26001B bảng dữ liệu(HTML) 2 Page - Texas Instruments

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Exposed Pad
Connect to GND
GND 8
VIN 1
VIN 2
PGOOD 3
EN 4
SS 5
COMP 6
FB 7
9 FREQ
10 FPWM
11 SYNC
12 VBIAS
13 VDD
14 BOOT
15 SW
16 SW
LM26001B
SNVS491B – MAY 2007 – REVISED APRIL 2013
www.ti.com
Connection Diagram
Top View
Figure 1. 16-Lead Exposed Pad HTSSOP Package
See Package Number PWP0016A
Pin Descriptions
Pin #
Pin Name
Description
1
VIN
Power supply input
2
VIN
Power supply input
3
PGOOD
Power Good pin. An open drain output which goes high when the output voltage is greater than 92% of
nominal.
4
EN
Enable is an analog level input pin. When pulled below 0.8V, the device enters shutdown mode.
5
SS
Soft-start pin. Connect a capacitor from this pin to GND to set the soft-start time.
6
COMP
Compensation pin. Connect to a resistor capacitor pair to compensate the control loop.
7
FB
Feedback pin. Connect to a resistor divider between Vout and GND to set output voltage.
8
GND
Ground
9
FREQ
Frequency adjust pin. Connect a resistor from this pin to GND to set the operating frequency.
10
FPWM
FPWM is a logic level input pin. For normal operation, connect to GND. When pulled high, sleep mode
operation is disabled.
11
SYNC
Frequency synchronization pin. Connect to an external clock signal for synchronized operation. SYNC
must be pulled low for non-synchronized operation.
12
VBIAS
Connect to an external 3V or greater supply to bypass the internal regulator for improved efficiency. If
not used, VBIAS should be tied to GND.
13
VDD
The output of the internal regulator. Bypass with a minimum 1.0 µF capacitor.
14
BOOT
Bootstrap capacitor pin. Connect a 0.1µF minimum ceramic capacitor from this pin to SW to generate
the gate drive bootstrap voltage.
15
SW
Switch pin. The source of the internal N-channel switch.
16
SW
Switch pin. The source of the internal N-channel switch.
EP
EP
Exposed Pad thermal connection. Connect to GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM26001B


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