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IRF135SA204 bảng dữ liệu(PDF) 3 Page - International Rectifier

tên linh kiện IRF135SA204
Giải thích chi tiết về linh kiện  Synchronous rectifier applications
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IRF135SA204 bảng dữ liệu(HTML) 3 Page - International Rectifier

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September 17, 2015
IRG5K50P5K50PM06E
IRF135SA204
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
Conditions
gfs
Forward Transconductance
270
–––
–––
S VDS = 10V, ID = 96A
Qg
Total Gate Charge
–––
210
315
nC  
ID = 96A
Qgs
Gate-to-Source Charge
–––
54
–––
VDS = 68V
Qgd
Gate-to-Drain Charge
–––
57
–––
VGS = 10V
Qsync
Total Gate Charge Sync. (Qg– Qgd)
–––
153
–––
td(on)
Turn-On Delay Time
–––
20
–––
ns
VDD = 81V
tr
Rise Time
–––
56
–––
ID = 96A
td(off)
Turn-Off Delay Time
–––
140
–––
RG= 2.7
tf
Fall Time
–––
56
–––
VGS = 10V
Ciss
Input Capacitance
–––
11690
–––
pF  
VGS = 0V
Coss
Output Capacitance
–––
650
–––
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
290
–––
ƒ = 1.0MHz, See Fig.7
Coss eff.(ER)
Effective Output Capacitance
(Energy Related)
–––
630
–––
VGS = 0V, VDS = 0V to 108V
Coss eff.(TR)
Output Capacitance (Time Related)
–––
845
–––
VGS = 0V, VDS = 0V to 108V
Diode Characteristics  
Symbol
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
–––
–––
160
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
608
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V TJ = 25°C,IS = 96A,VGS = 0V 
trr
Reverse Recovery Time
–––
85
–––
ns
TJ = 25°C
VDD = 115V
–––
98
–––
TJ = 125°C
IF = 96A,
Qrr
Reverse Recovery Charge
–––
315
–––
nC
TJ = 25°C
di/dt = 100A/µs 
–––
430
–––
TJ = 125°C
 
IRRM
Reverse Recovery Current
–––
6.6
–––
A TJ = 25°C
dv/dt
Peak Diode Recovery dv/dt
–––
22
–––
V/ns TJ = 175°C,IS =96A,VDS = 135V
D
S
G


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