TC1030EQR datasheet(2/14 Pages) MICROCHIP

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TC1030

DS21341B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD +0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1030 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD =3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless

otherwise specified.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

1.8

—

5.5

V

Shutdown Inputs

VIH

Input High Threshold

80% VDD

——

V

VIL

Input Low Threshold

—

20% VDD

V

ISI

Shutdown Input Current,

SHDNB or SHDNC/D

—

±100

nA

Op Amps

IQ

Supply Current, Operating

—

20

32

µA

All Outputs Open,

SHDNB =VDD,

SHDNC/D =VDD

ISHDN

Supply Current Shutdown Mode

—

6

10

µA

SHDNB =VSS,

SHDNC/D =VSS

ROUT(SD) Output Resistance in Shutdown

20

—

M

Ω

SHDNB =VSS,

SHDNC/D =VSS

COUT(SD) Out Capacitance in Shutdown

—

5

pF

SHDNB =VSS,

SHDNC/D =VSS

TSEL

Select Time

(VOUT from SHDNB, SHDNC/D)= VIL

—15

—

µsec R

L =10kΩ to VSS

TDESEL

Deselect Time

(VOUT from SHDNB, SHDNC/D)= VIL

—

20

—

nsec

RL =10kΩ to VSS

AVOL

Large Signal Voltage Gain

—

100

—

V/mV

RL =10kΩ,VDD =5V

GBWP

Gain-Bandwidth Product

—

90

—

kHz

VDD = 1.8V to 5.5V;

VO =VDD to VSS

VICMR

Common Mode Input Voltage Range

VSS –0.2

—

VDD +0.2

V

VOS

Input Offset Voltage

±100

±0.3

±500

±1.5

µV

mV

VDD =3V, VCM =1.5V, TA =25°C,

TA =–40°C to 85°C

IB

Input Bias Current

-100

50

100

pA

TA =25°C;

VCM =VDD to VSS

VOS(DRIFT) Input Offset Voltage Drift

—

±4

—

µV/°C V

DD =3V; VCM =1.5V

SR

Slew Rate

—

35

—

mV/

µsec C

L = 100pF;

RL =1 MΩ to GND,

Gain = 1

VIN =VSS to VDD

VOUT

Output Signal Swing

VSS +0.05

—

VDD –0.05

V

RL =10kΩ

CMRR

Common Mode Rejection Ratio

70

—

dB

TA =25°C; VDD =5V;

VCM =VDD to VSS

PSRR

Power Supply Rejection Ratio

80

—

dB

TA =25°C; VCM =VSS;

VDD =1.8V to 5V

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