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LM123QML
SNVS393A – DECEMBER 2010 – REVISED APRIL 2013
www.ti.com
Schematic Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Input Voltage
20V
Power Dissipation(2)
Internally Limited
Operating Junction Temperature Range
−55°C ≤ TJ ≤ +150°C
Storage Temperature Range
−65°C ≤ TJ ≤ +150°C
Lead Temperature (Soldering, 10 sec.)
300°C
ESD Tolerance(3)
2000V
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The specified specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2)
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3)
Human body model, 1.5 k
Ω in series with 100 pF.
2
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