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1 / 15 page BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature monitoring due to integrated temperature sensor Low conduction losses due to low on-state resistance Q101 compliant 1.3 Applications 12 V and 24 V high power motor drives Automotive and general purpose power switching Electrical Power Assisted Steering (EPAS) Protected drive for lamps 1.4 Quick reference data [1] Current is limited by power dissipation chip rating. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit ID drain current VGS =5V; Tmb =25°C; see Figure 2; see Figure 3 [1] -- 140 A Ptot total power dissipation Tmb =25°C; see Figure 1 -- 272 W Tj junction temperature -55 - 175 °C RDSon drain-source on-state resistance VGS =10V; ID =50A; Tj =25°C - 5.2 6.2 m Ω VGS =4.5 V; ID =50A; Tj =25°C - 6 7.7 m Ω VGS =5V; ID =50A; Tj =25 °C; see Figure 7; see Figure 8 -5.8 7 m Ω SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; Tj >-55 °C; Tj < 175 °C -1.4 -1.54 -1.68 mV/K VF(TSD) temperature sense diode forward voltage IF = 250 µA; Tj = 25 °C 648 658 668 mV |
Số phần tương tự - BUK9107-40ATC_15 |
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Mô tả tương tự - BUK9107-40ATC_15 |
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