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BUK9230-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 1 February 2011
6 of 14
NXP Semiconductors
BUK9230-100B
N-channel TrenchMOS logic level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V; Tj = -55 °C
89
-
-
V
ID = 0.25 mA; VGS =0V; Tj = 25 °C
100
-
-
V
VGS(th)
gate-source threshold voltage
ID =1mA; VDS =VGS; Tj = 185 °C;
see Figure 8
0.4
--V
ID =1mA; VDS =VGS; Tj =25 °C;
see Figure 8
1.1
1.5
2
V
ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 8
--2.3
V
IDSS
drain leakage current
VDS =100 V; VGS =0V; Tj = 185 °C
-
-
500
µA
VDS =100 V; VGS =0V; Tj = 25 °C
-
0.02
1
µA
IGSS
gate leakage current
VGS =15V; VDS =0V; Tj = 25 °C
-
2
100
nA
VGS =-15 V; VDS =0V; Tj = 25 °C
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25 A; Tj =185 °C;
see Figure 9; see Figure 13
--78
m
VGS =10V; ID =25A; Tj = 25 °C
-
24
28
m
VGS =4.5 V; ID =25 A; Tj = 25 °C
--33
m
VGS =5V; ID =25 A; Tj =25 °C;
see Figure 9; see Figure 13
-
2530m
Dynamic characteristics
QG(tot)
total gate charge
ID =25A; VDS =80V; VGS =5V;
Tj =25 °C; see Figure 10
-33
-
nC
QGS
gate-source charge
-
7
-
nC
QGD
gate-drain charge
-
13
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V; f=1MHz;
Tj =25 °C; see Figure 11
-
2854
3805
pF
Coss
output capacitance
-
232
278
pF
Crss
reverse transfer capacitance
-
81
110
pF
td(on)
turn-on delay time
VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-30
-
ns
tr
rise time
-
86
-
ns
td(off)
turn-off delay time
-
96
-
ns
tf
fall time
-
46
-
ns
LD
internal drain inductance
measured from drain to center of die ;
Tj =25 °C
-2.5
-nH
LS
internal source inductance
measured from source lead to source
bond pad ; Tj =25°C
-7.5
-nH
Source-drain diode
VSD
source-drain voltage
IS =25A; VGS =0V; Tj =25°C;
see Figure 12
-
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = -100 A/µs;
VGS =-10 V; VDS =30V; Tj =25°C
-114
-ns
Qr
recovered charge
-
196
-
nC


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