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BUK9230-100B bảng dữ liệu(PDF) 6 Page - NXP Semiconductors |
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BUK9230-100B bảng dữ liệu(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK9230-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 1 February 2011 6 of 14 NXP Semiconductors BUK9230-100B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V; Tj = -55 °C 89 - - V ID = 0.25 mA; VGS =0V; Tj = 25 °C 100 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj = 185 °C; see Figure 8 0.4 --V ID =1mA; VDS =VGS; Tj =25 °C; see Figure 8 1.1 1.5 2 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 8 --2.3 V IDSS drain leakage current VDS =100 V; VGS =0V; Tj = 185 °C - - 500 µA VDS =100 V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS =15V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-15 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25 A; Tj =185 °C; see Figure 9; see Figure 13 --78 m Ω VGS =10V; ID =25A; Tj = 25 °C - 24 28 m Ω VGS =4.5 V; ID =25 A; Tj = 25 °C --33 m Ω VGS =5V; ID =25 A; Tj =25 °C; see Figure 9; see Figure 13 - 2530m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =80V; VGS =5V; Tj =25 °C; see Figure 10 -33 - nC QGS gate-source charge - 7 - nC QGD gate-drain charge - 13 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25 °C; see Figure 11 - 2854 3805 pF Coss output capacitance - 232 278 pF Crss reverse transfer capacitance - 81 110 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25°C -30 - ns tr rise time - 86 - ns td(off) turn-off delay time - 96 - ns tf fall time - 46 - ns LD internal drain inductance measured from drain to center of die ; Tj =25 °C -2.5 -nH LS internal source inductance measured from source lead to source bond pad ; Tj =25°C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 12 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30V; Tj =25°C -114 -ns Qr recovered charge - 196 - nC |
Số phần tương tự - BUK9230-100B_15 |
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Mô tả tương tự - BUK9230-100B_15 |
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