công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
BUK9506-40B bảng dữ liệu(PDF) 6 Page - NXP Semiconductors |
|
BUK9506-40B bảng dữ liệu(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK9506-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 25 January 2011 6 of 14 NXP Semiconductors BUK9506-40B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V; Tj = 25 °C 40 --V ID = 0.25 mA; VGS =0V; Tj = -55 °C 36 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25 °C; see Figure 10 1.1 1.5 2 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --2.3 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10 0.5 --V IDSS drain leakage current VDS =40 V; VGS =0V; Tj = 25 °C - 0.02 1 µA VDS =40 V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VGS =15 V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-15 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =5 V; ID =25A; Tj =175 °C; see Figure 11; see Figure 12 - - 12.2 m Ω VGS =10 V; ID =25A; Tj =25°C - 4.1 5 m Ω VGS =4.5 V; ID =25 A; Tj = 25 °C --7.1 m Ω VGS =5 V; ID =25A; Tj =25°C; see Figure 11 -5.7 6.4 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =32 V; VGS =5V; Tj =25°C; see Figure 13 -44 - nC QGS gate-source charge - 11 - nC QGD gate-drain charge - 17 - nC Ciss input capacitance VGS =0 V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 3967 4901 pF Coss output capacitance - 634 760 pF Crss reverse transfer capacitance - 278 380 pF td(on) turn-on delay time VDS =30 V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25°C -43 - ns tr rise time - 145 - ns td(off) turn-off delay time - 132 - ns tf fall time - 92 - ns LD internal drain inductance from contact screw on mounting base to center of die ; Tj =25°C -3.5 -nH from drain lead 6 mm from package to centre of die ; Tj =25°C -4.5 -nH LS internal source inductance from source lead to source bond pad ; Tj =25°C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30V; Tj =25 °C -61 - ns Qr recovered charge - 57 - nC |
Số phần tương tự - BUK9506-40B_15 |
|
Mô tả tương tự - BUK9506-40B_15 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |