BUK9607-30B_15 datasheet(2/14 Pages) PHILIPS

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BUK9607-30B

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Product data sheet

Rev. 02 — 31 January 2011

2 of 14

NXP Semiconductors

BUK9607-30B

N-channel TrenchMOS logic level FET

[1]

Continuous current is limited by package.

2.

Pinning information

[1]

It is not possible to make a connection to pin 2 of the SOT404 package.

3.

Ordering information

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

ID =75A; Vsup ≤ 30 V;

RGS =50 Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--327

mJ

Dynamic characteristics

QGD

gate-drain charge

VGS =5V; ID =25 A;

VDS =24V; Tj =25 °C;

see Figure 13

-7.6

-nC

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT404 (D2PAK)

3

D

drain[1]

3S

source

mb

D

mounting base; connected to

drain

mb

13

2

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9607-30B

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads

(one lead cropped)

SOT404

Số phần tương tự - BUK9607-30B_15

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BUK9607-30B	300Kb / 15P	TrenchMOS logic level FET Rev. 01-25 April 2003
Inchange Semiconductor ...	BUK9607-30B	333Kb / 2P	isc N-Channel MOSFET Transistor
Nexperia B.V. All right...	BUK9607-30B	819Kb / 14P	N-channel TrenchMOS logic level FET Rev. 02 - 31 January 2011

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