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BUK7606-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 1 February 2011
3 of 13
NXP Semiconductors
BUK7606-55A
N-channel TrenchMOS standard level FET
4.
Limiting values
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VDGR
drain-gate voltage
RGS =20kΩ
-55
V
VGS
gate-source voltage
-20
20
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
[1]
-
154
A
[2]
-75
A
Tmb =100 °C; VGS = 10 V; see Figure 1 [2]
-75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
-
616
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
300
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb =25°C
[1]
-
154
A
[2]
-75
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
616
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID =75A; Vsup ≤ 55 V; RGS =50 Ω;
VGS =10V; Tj(init) = 25 °C; unclamped
-1.1
J
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03ne93
0
50
100
150
200
25
50
75
100
125
150
175
200
Tmb (°C)
ID
(A)
Capped at 75 A due to package
Tmb (°C)
0
200
150
50
100
03na19
40
80
120
Pder
(%)
0


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