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3 / 13 page BUK7606-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 — 1 February 2011 3 of 13 NXP Semiconductors BUK7606-55A N-channel TrenchMOS standard level FET 4. Limiting values [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V VDGR drain-gate voltage RGS =20kΩ -55 V VGS gate-source voltage -20 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 1; see Figure 3 [1] - 154 A [2] -75 A Tmb =100 °C; VGS = 10 V; see Figure 1 [2] -75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 616 A Ptot total power dissipation Tmb =25°C; see Figure 2 - 300 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25°C [1] - 154 A [2] -75 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 616 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 55 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped -1.1 J Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 03ne93 0 50 100 150 200 25 50 75 100 125 150 175 200 Tmb (°C) ID (A) Capped at 75 A due to package Tmb (°C) 0 200 150 50 100 03na19 40 80 120 Pder (%) 0 |
Số phần tương tự - BUK7606-55A_15 |
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Mô tả tương tự - BUK7606-55A_15 |
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