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BUK7Y13-40B bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

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BUK7Y13-40B_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 26 May 2008
2 of 12
NXP Semiconductors
BUK7Y13-40B
N-channel TrenchMOS standard level FET
2.
Pinning information
3.
Ordering information
4.
Limiting values
[1]
Single-pulse avalanche rating limited by maximum junction temperature of 175
°C.
[2]
Repetitive avalanche rating limited by an average junction temperature of 170
°C.
[3]
Refer to application note AN10273 for further information.
Table 2.
Pinning
Pin
Symbol
Description
Simplified outline
Graphic symbol
1, 2, 3
S
source
SOT669 (LFPAK)
4
G
gate
mb
D
mounting base;
connected to drain
mb
1234
S
D
G
mbb076
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7Y13-40B
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C-
40
V
VDGR
drain-gate voltage
RGS =20kΩ
-40
V
VGS
gate-source voltage
20
20
V
ID
drain current
Tmb =25 °C; VGS = 10 V; see Figure 1 and 4
-58
A
Tmb = 175 °C; VGS = 10 V; see Figure 1
-41
A
IDM
peak drain current
Tmb =25 °C; tp ≤ 10 μs; pulsed; see Figure 4
-
234
A
Ptot
total power dissipation
Tmb =25 °C; see Figure 2
-85
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
ID =58A; Vsup ≤ 40 V; RGS =50 Ω;
VGS =10 V; Tj(init) =25 °C; unclamped
-85
mJ
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3
[1][2]
[3]
--J
Source-drain diode
IS
source current
Tmb =25 °C-
58
A
ISM
peak source current
tp ≤ 10 μs; pulsed; Tmb =25 °C
-
234
A


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