công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

BUK7Y13-40B bảng dữ liệu(PDF) 5 Page - NXP Semiconductors

tên linh kiện BUK7Y13-40B
Giải thích chi tiết về linh kiện  N-channel TrenchMOS standard level FET
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  PHILIPS [NXP Semiconductors]
Trang chủ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7Y13-40B bảng dữ liệu(HTML) 5 Page - NXP Semiconductors

  BUK7Y13-40B_15 Datasheet HTML 1Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 2Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 3Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 4Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 5Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 6Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 7Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 8Page - NXP Semiconductors BUK7Y13-40B_15 Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 12 page
background image
BUK7Y13-40B_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 26 May 2008
5 of 12
NXP Semiconductors
BUK7Y13-40B
N-channel TrenchMOS standard level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =250 μA; VGS =0V;
Tj =25 °C
40
-
-
V
ID =250 μA; VGS =0V;
Tj =-55 °C
36
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS = VGS; Tj =25 °C;
see Figure 10 and 11
23
4V
ID =1mA; VDS = VGS;
Tj =-55 °C; see Figure 10
--
4.4
V
ID =1mA; VDS = VGS;
Tj = 175 °C; see Figure 10
1-
-
V
IDSS
drain leakage current
VDS =40V; VGS =0V;
Tj = 175 °C
--
500
μA
VDS =40V; VGS =0V; Tj =25 °C
-
0.02
1
μA
IGSS
gate leakage current
VDS =0V; VGS =20V; Tj =25 °C
-
2
100
nA
VDS =0V; VGS =-20 V;
Tj =25 °C
-2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj = 175 °C; see Figure 12
--
25
m
Ω
VGS =10V; ID =25A; Tj =25 °C;
see Figure 13 and 12
-11
13
m
Ω
Source-drain diode
VSD
source-drain voltage
IS =25A; VGS =25V; Tj =25 °C;
see Figure 16
-0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/μs;
VGS =0V; VDS =30V
-41
-
ns
Qr
recovered charge
-
22
-
nC
Dynamic characteristics
QG(tot)
total gate charge
ID =10A; VDS =32V;
VGS =10V; see Figure 14
-19
-
nC
QGS
gate-source charge
-
6
-
nC
QGD
gate-drain charge
-
5
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f=1MHz; Tj =25 °C;
see Figure 15
-
983
1311
pF
Coss
output capacitance
-
280
336
pF
Crss
reverse transfer
capacitance
-
138
189
pF
td(on)
turn-on delay time
VDS =30V; RL =2.5 Ω;
VGS =10V; RG(ext) =10 Ω
-9
-ns
tr
rise time
-
25
-
ns
td(off)
turn-off delay time
-
35
-
ns
tf
fall time
-
27
-
ns


Số phần tương tự - BUK7Y13-40B_15

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
NXP Semiconductors
BUK7Y13-40B NXP-BUK7Y13-40B_08 Datasheet
198Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 03-26 May 2008
More results

Mô tả tương tự - BUK7Y13-40B_15

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
NXP Semiconductors
BUK7675-55A PHILIPS-BUK7675-55A_15 Datasheet
272Kb / 12P
   N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET
25 August 2014
PHP34NQ11T PHILIPS-PHP34NQ11T Datasheet
91Kb / 12P
   N-channel TrenchMOS??standard level FET
Rev. 01-17 May 2004
BUK7C06-40AITE PHILIPS-BUK7C06-40AITE Datasheet
109Kb / 14P
   N-channel TrenchMOS standard level FET
Rev. 04-23 June 2005
PH20100S NXP-PH20100S Datasheet
183Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 03-2 February 2009
PHB29N08T NXP-PHB29N08T Datasheet
189Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 03-13 October 2009
PHB47NQ10T NXP-PHB47NQ10T Datasheet
205Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02-25 February 2010
PHB119NQ06T NXP-PHB119NQ06T Datasheet
191Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02-15 April 2010
PHD20N06T NXP-PHD20N06T Datasheet
379Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 02-1 December 2009
PMZ350XN NXP-PMZ350XN Datasheet
91Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 01-21 February 2008
PHP23NQ11T NXP-PHP23NQ11T Datasheet
220Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02-25 February 2010
PHP3055E NXP-PHP3055E Datasheet
248Kb / 14P
   N-channel TrenchMOS standard level FET
Rev. 07-26 February 2010
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


bảng dữ liệu tải về

Go To PDF Page


Link URL




Chính sách bảo mật
ALLDATASHEET.VN
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com