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BC327G-XX-T92-K bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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BC327G-XX-T92-K bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
2 / 4 page BC327/328 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R201-038.B ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-emitter voltage BC327 VCES -50 V BC328 -30 V Collector-emitter voltage BC327 VCEO -45 V BC328 -25 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -800 mA Collector dissipation PC 625 mW Junction Temperature TJ 125 °С Operating Temperature TOPR -20 ~ +85 °С Storage Temperature TSTG -40 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage BC327 BVCEO IC=-10mA, IB=0 -45 V BC328 -25 V Collector-emitter breakdown voltage BC327 BVCES IC=-0.1mA, VBE=0 -50 V BC328 -30 V Emitter-base breakdown voltage BVEBO IE=-10mA, IC=0 -5 V Collector Cut-off Current BC327 ICES VCE=-45V, IB=0 -2 -100 V BC328 VCE=-25V, IB=0 -2 -100 V DC current gain hFE1 VCE=-1V, IC=-100mA 100 630 hFE2 VCE=-1V, IC=-300mA 40 Collector-emitter saturation voltage VCE(SAT) IC=-500mA, IB=-50mA -0.7 V Base-emitter on voltage VBE(ON) VCE=-1V, IC=-300mA -1.2 V Current gain bandwidth product fT VCE=-5V, IC=-10mA, f=20MHz 100 MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 12 pF CLASSIFICATION OF hFE RANK 16 25 40 hFE1 100-250 160-400 250-630 hFE2 60~ 100~ 170~ |
Số phần tương tự - BC327G-XX-T92-K |
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Mô tả tương tự - BC327G-XX-T92-K |
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