1N3883R datasheet(1/3 Pages) GENESIC

tên linh kiện	1N3883R

Giải thích chi tiết về linh kiện	High Surge Capability

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nhà sản xuất	GENESIC [GeneSiC Semiconductor, Inc.]

Trang chủ	http://www.genesicsemi.com/

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VRRM = 50 V - 400 V

IF = 6 A

Features

• High Surge Capability

DO-4 Package

• Types up to 400 V VRRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R)

Unit

Repetitive peak reverse

voltage

VRRM

50

100

200

300

V

RMS reverse voltage

VRMS

35

70

140

210

V

280

1N3879 thru 1N3883R

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

Silicon Fast

Recovery Diode

2. Reverse polarity (R): Stud is anode.

1N3883 (R)

400

DC blocking voltage

VDC

50

100

200

300

V

Continuous forward current

IF

66

6

A

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R)

Unit

Diode forward voltage

1.4

15

μA

33

3

mA

Recovery Time

Maximum reverse recovery

time

TRR

200

nS

Thermal characteristics

Thermal resistance, junction

- case

RthJC

2.5

°C/W

1N3883 (R)

2.5

6

400

90

15

IF=0.5 A, IR=1.0 A,

IRR= 0.25 A

VR = 50 V, Tj = 150 °C

V

3

200

VR = 50 V, Tj = 25 °C

IF = 6 A, Tj = 25 °C

TC ≤ 100 °C

Conditions

90

TC = 25 °C, tp = 8.3 ms

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

A

Reverse current

IR

VF

1.4

-55 to 150

IF,SM

90

www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/

1

Số phần tương tự - 1N3883R

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