BUK764R0-55B_15 datasheet(3/14 Pages) PHILIPS

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BUK764R0-55B

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Product data sheet

Rev. 5 — 22 April 2011

3 of 14

NXP Semiconductors

BUK764R0-55B

N-channel TrenchMOS standard level FET

4.

Limiting values

[1]

Continuous current is limited by package.

[2]

Current is limited by power dissipation chip rating.

[3]

Refer to document 9397 750 12572 for further information.

[4]

Maximum value not quoted. Repetitive rating defined in avalanche rating figure.

[5]

Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[6]

Repetitive avalanche rating limited by an average junction temperature of 170 °C.

[7]

Refer to application note AN10273 for further information.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

55

V

VDGR

drain-gate voltage

RGS =20kΩ

-55

V

VGS

gate-source voltage

-20

20

V

ID

drain current

Tmb =25°C; VGS =10V; see Figure 1;

see Figure 4

[1] -75

A

[2][3] -

193

A

Tmb =100 °C; VGS = 10 V; see Figure 1

[1] -75

A

IDM

peak drain current

Tmb = 25 °C; pulsed; tp ≤ 10 µs;

see Figure 4

-

774

A

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-

300

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Source-drain diode

IS

source current

Tmb =25°C

[2][1] -

193

A

[1] -75

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

774

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

ID =75A; Vsup ≤ 55 V; RGS =50 Ω;

VGS =10V; Tj(init) = 25 °C; unclamped

-1.2

J

EDS(AL)R

repetitive drain-source

avalanche energy

see Figure 3

[4][5][6][

7]

--J

Số phần tương tự - BUK764R0-55B_15

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BUK764R0-55B	143Kb / 15P	TrenchMOS standard level FET Rev. 02-30 September 2002
NXP Semiconductors	BUK764R0-55B	101Kb / 14P	N-channel TrenchMOS standard level FET Rev. 04-4 October 2007
Inchange Semiconductor ...	BUK764R0-55B	333Kb / 2P	isc N-Channel MOSFET Transistor
Nexperia B.V. All right...	BUK764R0-55B	851Kb / 14P	N-channel TrenchMOS standard level FET Rev. 5 - 22 April 2011

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